Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon
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概要
- 論文の詳細を見る
- 2012-01-25
著者
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Miyazaki Hisao
International Center For Materials Nanoarchitectonics (mana) National Institute For Materials Scienc
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Tsukagoshi Kazuhito
International Center For Materials And Nanoarchitectonics National Institute For Materials Science
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Tsukagoshi Kazuhito
International Center For Materials Nanoarchitectonics (mana) National Institute For Materials Science (nims)
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Nakaharai Shu
Collaborative Research Team Green Nanoelectronics Center (gnc)
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Sato Shintaro
Collaborative Research Team Green Nanoelectronics Center (gnc)
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Yokoyama Naoki
Collaborative Research Team Green Nanoelectronics Center (gnc)
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IIJIMA Tomohiko
Innovation Center for Advanced Nanodevices (ICAN), National Institute of Advanced Industrial Science and Technology (AIST)
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OGAWA Shinichi
Innovation Center for Advanced Nanodevices (ICAN), National Institute of Advanced Industrial Science and Technology (AIST)
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LI Songlin
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS)
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Li Songlin
International Center For Materials Nanoarchitectonics (mana) National Institute For Materials Science (nims)
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Ogawa Shinichi
Innovation Center For Advanced Nanodevices (ican) National Institute Of Advanced Industrial Science And Technology (aist)
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Iijima Tomohiko
Innovation Center For Advanced Nanodevices (ican) National Institute Of Advanced Industrial Science And Technology (aist)
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Yokoyama Naoki
Collaborative Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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- Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon
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