Picoampere Resistive Switching Characteristics Realized with Vertically Contacted Carbon Nanotube Atomic Force Microscope Probe

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概要

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• The resistive switching characteristics of a TiO<inf>2</inf>/Ti structure have been investigated using a conductive atomic force microscopy (AFM) system with 5-nm-diameter carbon nanotube (CNT) probes. The resistive switching showed bipolar resistive random access memory (ReRAM) behaviors with extremely low switching currents in the order of Picoamperes when voltages were applied. From transmission electron microscopy (TEM) observation, we confirmed that filament-like nanocrystals, having a diameter of about 10 nm, existed in TiO<inf>2</inf>films at resistive switching areas after not only set operation but also reset operation. Moreover, photoemission electron microscopy (PEEM) analysis showed that the anatase-type TiO<inf>2</inf>structure did not change after set and reset operations. From these results, we suggested that the Picoampere resistive switching occurred at the interface between the TiO<inf>2</inf>dielectric and conductive nanocrystal without any structural changes in the TiO<inf>2</inf>film and nanocrystal. The resistive switching mechanism we suggested is highly promising to realize extremely low-power-consumption ReRAMs with vertically contacted CNT electrodes.

• The Japan Society of Applied Physicsの論文
• 2013-11-25

著者

• Muro Takayuki

  Japan Synchrotron Radiation Res. Inst. Hyogo Jpn

• KOTSUGI Masato

  Japan Synchrotron Radiation Research Institute

• Ohkochi Takuo

  Japan Atomic Energy Agency, Synchrotron Radiation Research Center, SPring-8, Sayo, Hyogo 679-5148

• Yokoyama Naoki

  Collaborative Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

• Sato Motonobu

  Collaborative Research Team Green Nanoelectronics Center (GNC)/National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

• Takahashi Makoto

  Collaborative Research Team Green Nanoelectronics Center (GNC)/National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

• Nakano Haruhisa

  Collaborative Research Team Green Nanoelectronics Center (GNC)/National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

• Nihei Mizuhisa

  Collaborative Research Team Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

• Sato Motonobu

  Collaborative Research Team Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

• Kotsugi Masato

  Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan

• Takahashi Makoto

  Collaborative Research Team Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

• Nakano Haruhisa

  Collaborative Research Team Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan

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