Fabrication of Graphene Directly on SiO without Transfer Processes by Annealing Sputtered Amorphous Carbon (Special Issue : Solid State Devices and Materials (2))
スポンサーリンク
概要
著者
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Muro Takayuki
Japan Synchrotron Radiation Res. Inst. Hyogo Jpn
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Ikenaga Eiji
Japan Synchrotron Radiation Research Institute
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Takakuwa Yuji
Tohoku Univ. Sendai Jpn
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Yokoyama Naoki
Collaborative Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
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Nihei Mizuhisa
Collaborative Research Team Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Kawabata Akio
Collaborative Research Team Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Sato Motonobu
Collaborative Research Team Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Nakano Haruhisa
Collaborative Research Team Green Nanoelectronics Center (GNC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8569, Japan
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Inukai Manabu
Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan
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Ogawa Shuichi
Tohoku University, Sendai 980-8577, Japan
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