Observation of Itinerant Ce 4f Electronic States in CeIrSi3 Studied by Angle-Resolved Ce $3\textit{d}\rightarrow 4\textit{f}$ Resonance Photoemission Spectroscopy

概要

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We have applied angle-resolved Ce $3\textit{d}\rightarrow 4\textit{f}$ resonance photoemission spectroscopy ($h\nu\sim 882$ eV) in the soft X-ray region to the analysis of the non-centrosymmetric pressure-induced superconductor CeIrSi3 and obtained the 4f band structure and Fermi surfaces. We have found that the Ce 4f states are located mainly near the Fermi level and that the photoemission feature corresponding to the dispersive conduction bands across the Fermi level shows considerable resonant enhancement. In addition, the band structure and Fermi surfaces of CeIrSi3 differ from those of the non-$ f$ reference compound LaIrSi3, and the differences are well explained by the band structure calculated within local density approximation, in which the Ce 4f states are assumed to be itinerant. These results strongly suggest that the Ce 4f electrons in CeIrSi3 hybridized well with conduction bands and form itinerant electronic states.
Physical Society of Japanの論文
2009-08-15