High-Current Reliability and Growth Conditions of Multilayer Graphene Wire Obtained by Annealing Sputtered Amorphous Carbon

概要

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We fabricated multilayer graphene directly on SiO<inf>2</inf>by annealing of sputtered amorphous carbon under a catalyst layer without complicated transfer processes, and investigated the effects of the catalysts and the annealing ambient gases on obtaining large-grain, multilayer graphene. As a result, it was found that annealing conditions with a Co catalyst layer in a nitrogen gas atmosphere are important for increasing the ratio of oriented graphene sheets, corresponding to a lower resistivity of the film. Furthermore, it was confirmed that the multilayer graphene wire obtained by optimizing the growth conditions can sustain a high current density of 10^{7} A/cm<sup>2</sup>, that is, the lifetime of the multilayer graphene wire is over two orders of magnitude longer than that of a Cu wire with the same current density; this current density is over one order of magnitude higher than the current density that can be carried by a Cu wire for the same lifetime.
2013-04-25