Transport Properties of Two Quantum Dots Connected in Series Formed in Silicon Inversion Layers
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概要
- 論文の詳細を見る
We have studied time transport properties over a range of temperatures of two quantum dots connected in series formed in silicon inversion layers. The inter-dot interaction as well as the electron number can be changed by means of the field effect in our device. For weak inter-dot interactions, the device shows a periodic current oscillation and a biquadratic temperature-dependent current due to co-tunneling. On increasing the inter-dot interaction, we have observed splitting of peaks and estimated the typical inter-dot capacitance to be 1.3×10^<-18>F.
- 社団法人応用物理学会の論文
- 1996-04-01
著者
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AHMED Haroon
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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Ahmed Haroon
Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
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Matsuoka H
Kyushu Inst. Technol. Iizuka Jpn
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MATSUOKA Hideyuki
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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