Characteristics of Electron Pump Circuits Using Silicon Multiple Tunnel Junctions
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概要
- 論文の詳細を見る
Electron pumps based on multiple tunnel junctions have been realized in silicon using highly doped nanowires in silicon-on-insulator material. The electron pump characteristics show a clear transfer of the pattern of Coulomb blockade oscillations to one of a pumping action. Furthermore, the pump current tends to scale linearly with the frequency. The results can be explained by a pumping mechanism in asymmetric multiple tunnel junctions. These devices allow sufficient control of electron packets which are potentially useful as basic building blocks of silicon-based binary-decision-diagram logic circuits.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-01-15
著者
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Ahmed Haroon
Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
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Ahmed Haroon
Miroelectronics Research Center Cavendish Laboratory University Of Cambridge
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ALTEBAEUMER Thomas
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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Altebaeumer Thomas
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
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Altebaeumer Thomas
Miroelectronics Research Center Cavendish Laboratory University Of Cambridge
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