Coulomb Blockade in a Laterally-Confined Double-Barrier Heterostructure with a Doped, Wide Well

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概要

• 論文の詳細を見る

• Coulomb Blockade has been observed in a laterally-confined double-barrier heterostructure with a doped, wide well. The large-area characteristics exhibit only weak resonances, with no threshold voltage. When the device is laterally confined a plateau in I-V develops about zero bias, with weak structure either side. As the barriers are symmetric, no clear Coulomb Staircase is observed.

• 社団法人応用物理学会の論文
• 1997-11-15

著者

• Cleaver John

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge

• Cleaver John

  Microelectronics Research Center Cavendish Laboratory

• Piotrowicz Pawel

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

関連論文

• Application of Focused Ion Beam Implantation to Produce Gallium Arsenide Metal Semiconductor Field-Effect Transistors with a Novel Doping Profile
• Coulomb Blockade in a Laterally-Confined Double-Barrier Heterostructure with a Doped, Wide Well

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