EVANS Gareth | Microelectronics Research Center, Cavendish Laboratory

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概要

関連著者

MIZUTA Hiroshi
Hitachi Cambridge Laboratory
Ahmed Haroon
Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)
EVANS Gareth
Microelectronics Research Center, Cavendish Laboratory
AHMED Haroon
Microelectronics Research Center, Cavendish Laboratory:CREST, Japan Science and Technology (JST)

著作論文

Modelling of Structural and Threshold Voltage Characteristics of Randomly Doped Silicon Nanowires in the Coulomb-Blockade Regime : Semiconductors

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