TANIGUCHI Kenji | Electronics, Information Systems and Energy Engineering, Osaka University

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概要

• 同名の論文著者
• Electronics, Information Systems and Energy Engineering, Osaka Universityの論文著者

関連著者

• 神谷 武志

  東京大学大学院電子工学専攻

• 神谷 武志

  東大工

• Tan Yong

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:crest Jst (japan Scien

• Taniguchi K

  Osaka Univ. Osaka Jpn

• FURUTA Yoshikazu

  Hitachi Cambridge Laboratory

• MIZUTA Hiroshi

  Hitachi Cambridge Laboratory

• NAKAZATO Kazuo

  Hitachi Cambridge Laboratory

• KAMIYA Toshio

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

• DURRANI Zahid

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

• TANIGUCHI Kenji

  Electronics, Information Systems and Energy Engineering, Osaka University

• Durrani Zahid

  Microelectronics Research Centre Cavendish Laboratory University Of Cambridge:crest Jst (japan Scien

• Katase Takayoshi

  Aterials And Structures Laboratory Tokyo Institute Of Technology

• Mizuta H

  Hitachi Cambridge Laboratory:crest Jst (japan Science And Technology)

• 神谷 利夫

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Nakazato K

  Hitachi Cambridge Laboratory:crest Jst (japan Science And Technology)

• Nakazato Kazuo

  Hitachi Cambridge Lab. Hitachi Europe Cavendish Lab.

• Kamiya Toshio

  Kochi Prefectural Industrial Technology Center

• Furuta Yoshikazu

  Hitachi Cambridge Laboratory:crest Jst (japan Science And Technology)

• 神谷 武志

  Department Of Gastroenterology And Metabolism Nagoya City University Graduate School Of Medical Scie

• Taniguchi Kenji

  Electronic Engineering At Osaka University

• Ahmed H

  Univ. Cambridge Cambridge Gbr

• AHMED Haroon

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

• Ahmed Haroon

  Microelectronics Research Center Cavendish Laboratory:crest Japan Science And Technology (jst)

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著作論文

• Characterization of Tunnel Barriers in Polycrystalline Silicon Point-Contact Single-Electron Transistors
• Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon : Electrical Properties of Condensed Matter

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