Koike Junichi | Department Of Materials Science Graduate School Of Engineering Tohokuuniversity
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概要
関連著者
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Koike Junichi
Department Of Materials Science Graduate School Of Engineering Tohokuuniversity
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Koike Junichi
Department Of Materials Science Tohoku University
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小池 淳一
東北大
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小池 淳一
東北大工
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Koikei Junichi
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Sutou Yuji
Department Of Materials Science Graduate School Of Engineering Tohoku University
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樋口 透
東理大理
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KOIKE Junichi
Department of Materials Science, Tohoku University
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SHIMODA Tatsuya
Seiko Epson Corporation
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Shimoda T
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology
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Shimoda Tatsuya
Technology Platform Research Center Seiko Epson Corporation
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Shimoda Tatsuya
Seiko Epson Corp. Nagano Jpn
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HIGUCHI Takamitsu
Technology Platform Research Center, SEIKO EPSON Corporation
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IWASHITA Setsuya
Technology Platform Research Center, SEIKO EPSON Corporation
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CHEN Yuxi
Department of Materials Science, Graduate School of Engineering, Tohoku University
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Chen Yuxi
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Sekiguchi Atsuko
Department Of Clinical Research Oriental Medicine Research Center Kitasato University
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Chen Y
Department Of Electronic Science And Engineering Kyoto University
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Chen Yuxi
Department Of Electronic Science And Engineering Kyoto University
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Chen Y
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Iwashita Setsuya
Technology Platform Research Center Seiko Epson Corporation
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Higuchi T
東理大理
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SHIMODA Tatsuya
Technology Platform Research Center, Seiko Epson Cooperation
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Shimoda Tatsuya
Technology Platform Research Center Seiko Epson Corp.
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Kurokawa Atsuko
Department Of Gynecology Juntendo University School Of Medicine
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Nagai Hiroyuki
Leading Edge Process Development Center, Tokyo Electron Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Hamada Tatsufumi
Leading Edge Process Development Center, Tokyo Electron Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Matsumoto Kenji
Leading Edge Process Development Center, Tokyo Electron Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Maekawa Kaoru
TEL Technology Center, America, LLC, Albany, NY 12203, U.S.A.
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Kanato Hiroki
Chemicals Development Center, Ube Industries Ltd., Ube, Yamaguchi 755-8633, Japan
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Sutou Yuji
Department of Materials Science, Graduate School of Engineering, Tohoku University
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KOMIYAMA Shoko
Department of Materials Science, Tohoku University
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Higuchi T
Department Of Applied Physics Tokyo University Of Science
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IWASHITA Setsuya
echnology Platform Research Center SEIKO EPSON Corporation
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ISHIDA Masaya
echnology Platform Research Center SEIKO EPSON Corporation
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SHIMODA Tatsuya
echnology Platform Research Center SEIKO EPSON Corporation
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KOIKEI Junichi
Department of Materials Science, Graduate School of Engineering, Tohoku University
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ISHIDA Masaya
Technology Platform Research Center, SEIKO EPSON Corporation
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ISHIDAI Masaya
Technology Platform Research Center, SEIKO EPSON Corporation
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Ishida Masaya
Technology Platform Research Center Seiko Epson Corporation
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Sutou Yuji
Department Of Materials Science Tohoku University
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Komiyama Shoko
Department Of Materials Science Tohoku University
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NEISHI Koji
Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
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MATSUMOTO Kenji
Technology Development Center, Tokyo Electron Ltd.
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ITOH Hitoshi
Technology Development Center, Tokyo Electron Ltd.
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SATO Hiroshi
Technology Development Center, Tokyo Electron Ltd.
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HOSAKA Shigetoshi
Technology Development Center, Tokyo Electron Ltd.
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MARUYAMA Kouichi
Department of Environmental Studies, Graduate School of Environmental Studies, Tohoku University
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SEKIGUCHI Atsuko
Department of Clinical Research, Oriental Medicine Research Center, Kitasato University
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Sekiguchi Atsuko
Department Of Materials Science Tohoku University
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Neishi Koji
Department Of Materials Science Tohoku University
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Neishi Koji
Department Of Materials Science And Engineering Faculty Of Engineering Kyushu University
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Fujii Yoshihito
Department Of Oral Pathology School Of Dentistry Iwate Medical University
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Hosaka Shigetoshi
Technology Development Center Tokyo Electron Ltd.
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Itoh Hitoshi
Technology Development Center Tokyo Electron Ltd.
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Maruyama Kouichi
Department Of Anesthesiology Saitama International Medical Center Saitama Medical University
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Matsumoto Kenji
Technology Development Center Tokyo Electron Ltd.
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Maruyama Kouichi
Department Of Materials Science Tohoku University
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Matsumoto Kenji
Technical Laboratory Citizen Watch Co. Ltd.
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Phuong Nguyen
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Phuong Nguyen
Department of Materials Science, Tohoku University, Sendai 980-8579, Japan
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Tokei Zsolt
Imec, Kapeldreef 75, Leuven B-3001, Belgium
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Wilson Christopher
Imec, Kapeldreef 75, Leuven B-3001, Belgium
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Ablett James
Synchrotron Soleil, L'orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette F-91192, France
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Sterbinsky George
National Institute for Standards and Technology, Gaithersburg, MD 20899, U.S.A.
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Woicik Joseph
National Institute for Standards and Technology, Gaithersburg, MD 20899, U.S.A.
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Ablett James
Synchrotron Soleil, L'orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette F-91192, France
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Sato Hiroshi
Technology Development Center, Tokyo Electron AT Limited
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Koike Junichi
Department of Materials Science, Tohoku University, Sendai 980-8579, Japan
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Junichi Koike
Department of Materials Science, Tohoku University, Sendai 980-8579, Japan
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Kurokawa Atsuko
Department of Materials Science, Tohoku University, Sendai 980-8579, Japan
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Koji Neishi
Department of Materials Science, Tohoku University, Sendai 980-8579, Japan
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Zifeng Li
Department of Materials Science, Tohoku University, Sendai 980-8579, Japan
著作論文
- Effect of Heat Treatment on the Hardness of Ti-Mo-N Films Deposited by RF Reactive Magnetron Sputtering
- Epitaxial Growth of SrRuO_3 Thin Film Electrode on Si by Pulsed Laser Deposition
- Fabrication of Pseudocubic SrRuO_3 (100) Epitaxial Thin Films on Si by Pulsed Laser Deposition : Surfaces, Interfaces, and Films
- Microstructural Investigation of Pulsed-Laser-Deposited SrRuO_3 Films on Si with SrO Buffer Layers : Semiconductors
- Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and Diffusion Barrier Properties on Patterned Interconnect Structures
- Formation of Slit-Like Voids at Trench Corners of Damascene Cu Interconnects
- Selective Formation of a SnO2 Cap Layer, Its Growth Behavior, and Oxidation Resistance
- Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure
- Evaluation of Interface Adhesion Strength in Cu/(Ta–$x$% N, Ta/TaN)/SiO2/Si by Nanoscratch Test
- Simultaneous Formation of a Metallic Mn Layer and a MnO
- Finite Element Method Analysis of Nanoscratch Test for the Evaluation of Interface Adhesion Strength in Cu Thin Films on Si Substrate
- Simultaneous Formation of a Metallic Mn Layer and a MnO