Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure
スポンサーリンク
概要
- 論文の詳細を見る
Chemical vapor deposition of manganese (CVD-Mn) on silicon dielectrics allows the growth of manganese silicate/oxide for use as an effective barrier material for Cu interconnects and is currently under intense evaluation for integration into future sub-22 nm technology. Employing fluorescence X-ray absorption fine structure (XAFS) measurements, we explore the chemical and structural makeup of the barrier layer formation on both SiO2 and low-k dielectrics.
- 2012-05-25
著者
-
Koike Junichi
Department Of Materials Science Graduate School Of Engineering Tohokuuniversity
-
Phuong Nguyen
Department of Electrical, Electronic and Information Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 940-2188, Japan
-
Phuong Nguyen
Department of Materials Science, Tohoku University, Sendai 980-8579, Japan
-
Tokei Zsolt
Imec, Kapeldreef 75, Leuven B-3001, Belgium
-
Wilson Christopher
Imec, Kapeldreef 75, Leuven B-3001, Belgium
-
Ablett James
Synchrotron Soleil, L'orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette F-91192, France
-
Sterbinsky George
National Institute for Standards and Technology, Gaithersburg, MD 20899, U.S.A.
-
Woicik Joseph
National Institute for Standards and Technology, Gaithersburg, MD 20899, U.S.A.
-
Ablett James
Synchrotron Soleil, L'orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette F-91192, France
関連論文
- Application of the PCR technique to find TDF, Amely and DYZ genes for the sex determination of the patients with the hermaphrodites and comparing with the karyotype
- Effect of Heat Treatment on the Hardness of Ti-Mo-N Films Deposited by RF Reactive Magnetron Sputtering
- Epitaxial Growth of SrRuO_3 Thin Film Electrode on Si by Pulsed Laser Deposition
- Fabrication of Pseudocubic SrRuO_3 (100) Epitaxial Thin Films on Si by Pulsed Laser Deposition : Surfaces, Interfaces, and Films
- Microstructural Investigation of Pulsed-Laser-Deposited SrRuO_3 Films on Si with SrO Buffer Layers : Semiconductors
- Application of a Nano-Mechanical Sensor to Monitor Stress in Copper Damascene Interconnects
- Chemical Vapor Deposition of Mn and Mn Oxide and their Step Coverage and Diffusion Barrier Properties on Patterned Interconnect Structures
- Formation of Slit-Like Voids at Trench Corners of Damascene Cu Interconnects
- Prevalence of hepatitis virus types B through E and genotypic distribution of HBV and HCV in Ho Chi Minh City, Vietnam
- Congenital deformities at Tu Du Hospital in 1994 : The 35th Annual Meeting of the Japanese Teratology Society
- Selective Formation of a SnO2 Cap Layer, Its Growth Behavior, and Oxidation Resistance
- Epidemiological aspects of congenital anomalies in Vietnam : THE PRESENT STATE OF CONGENITAL ANOMALIES IN ASIA : The 35th Annual Meeting of the Japanese Teratology Society
- Characterization of Chemically Vapor Deposited Manganese Barrier Layers Using X-ray Absorption Fine Structure
- Improvement in Crystallinity of ZnO Films Prepared by rf Magnetron Sputtering with Grid Electrode
- Evaluation of Interface Adhesion Strength in Cu/(Ta–$x$% N, Ta/TaN)/SiO2/Si by Nanoscratch Test
- Wafer-Level Electrical Evaluation of Vertical Carbon Nanotube Bundles as a Function of Growth Temperature
- Simultaneous Formation of a Metallic Mn Layer and a MnO
- Finite Element Method Analysis of Nanoscratch Test for the Evaluation of Interface Adhesion Strength in Cu Thin Films on Si Substrate
- Simultaneous Formation of a Metallic Mn Layer and a MnO