Simultaneous Formation of a Metallic Mn Layer and a MnO
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概要
- 論文の詳細を見る
A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)--SiO<inf>2</inf>substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-(tert-butylamide)-2-dimethylaminoethane-N,N\aku ']manganese. A thin and uniform Mn oxide layer was simultaneously formed at a CVD-Mn/TEOS--SiO<inf>2</inf>interface, and was partially embedded in the TEOS--SiO<inf>2</inf>. This Mn oxide layer was composed of a bilayer of MnO<inf>x</inf>and MnSi<inf>x</inf>O<inf>y</inf>. After annealing at 400 °C in vacuum for 10 h, the interface Mn oxide layer showed a good barrier property and thermal stability.
- 2013-05-25
著者
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Koike Junichi
Department Of Materials Science Graduate School Of Engineering Tohokuuniversity
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Kurokawa Atsuko
Department Of Gynecology Juntendo University School Of Medicine
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Sutou Yuji
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Nagai Hiroyuki
Leading Edge Process Development Center, Tokyo Electron Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Hamada Tatsufumi
Leading Edge Process Development Center, Tokyo Electron Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Matsumoto Kenji
Leading Edge Process Development Center, Tokyo Electron Ltd., Nirasaki, Yamanashi 407-0192, Japan
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Maekawa Kaoru
TEL Technology Center, America, LLC, Albany, NY 12203, U.S.A.
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Kanato Hiroki
Chemicals Development Center, Ube Industries Ltd., Ube, Yamaguchi 755-8633, Japan
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