Increased Subthreshold Current due to Source--Drain Direct Tunneling in Ultrashort-Channel III--V Metal--Oxide--Semiconductor Field-Effect Transistors
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概要
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The influence of quantum transport effects in ultrashort-channel InP metal--oxide--semiconductor field-effect transistors (MOSFETs) was investigated using a Wigner Monte Carlo method, in which both quantum transport and carrier scattering effects can be fully incorporated. It was found that source--drain (SD) direct tunneling becomes evident for channel lengths of less than about 20 nm. Since this critical channel length is approximately three times larger than that in Si-MOSFETs, countermeasures should be taken to suppress SD direct tunneling in order to aggressively downscale III--V channel MOSFETs. In contrast, quantum reflection effects were found to have a negligible influence on the on-state drain current.
- 2013-06-25
著者
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Ohmori Masaki
Department Of Pathology Kagawa Medical University
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Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Maegawa Yosuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Koba Shunsuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Ogawa Matsuto
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Kamakura Yoshinari
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
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Mori Nobuya
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
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Ohmori Masaki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Maegawa Yōsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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