Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels
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概要
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In this paper, we present a theoretical evaluation of ballistic electron transport in field-effect transistors (FETs) with semiconducting graphehe channels; bilayer graphenes (BLGs), monolayer graphene nanoribbons (MLGNRs), and bilayer graphene nanoribbons (BLGNRs). We found that the use of BLGNRs produces little advantage in either increasing the band gap energy or improving the device performance, as compared with a pristine BLG device. We also demonstrated that BLG-based FETs exhibit quite different behavior in the drain current versus gate voltage characteristics from that of MLGNR-FETs, since a distorted dispersion relation around the conduction band minima significantly affects the drain current property.
- 2012-05-25
著者
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Hosokawa Hiroshi
Department Of Dermatology Kansai Medical University
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Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Hosokawa Hiroshi
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Hasegawa Naomi
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Sako Ryutaro
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Tsuchiya Hideaki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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