Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport
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概要
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In this paper, we investigate the upper limit performance of bilayer graphene (BLG) and graphene nanoribbon (GNR) field-effect transistors (FETs) based on a first-principles approach. We have found that GNR-FETs with ribbon widths of about 3–4 nm exhibit better device performance than n-channel Si metal–oxide–semiconductor FETs and InP-high-electron-mobility transistors (HEMTs). Although a BLG-FET shows an inferior performance potential to GNR-FETs with a similar band gap, it is comparable to InP-HEMTs. The present simulation study indicates that both GNR and BLG are expected to be a post-Si channel material for high-speed digital switches in logic circuits.
- 2010-11-25
著者
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Hosokawa Hiroshi
Department Of Dermatology Kansai Medical University
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Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Hosokawa Hiroshi
Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Sako Ryutaro
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Ando Haruki
Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Tsuchiya Hideaki
Department of Electrical and Electronics Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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