Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport
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概要
著者
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Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Koba Shunsuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
関連論文
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- Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
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- Evaluation of Phase Coherent Length of Hot Electrons Based on Wigner Distribution Function
- Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport
- Guided Modes of Electron Wave in a Si-Quantum Wire
- Two-Dimensional Quantum Monte Carlo Device Simulation of Ultrasmall MOSFETs
- Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport
- Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation
- Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels
- Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
- Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal–Oxide–Semiconductor Field-Effect Transistors
- Increased Subthreshold Current due to Source--Drain Direct Tunneling in Ultrashort-Channel III--V Metal--Oxide--Semiconductor Field-Effect Transistors
- Channel Length Scaling Effects on Device Performance of Junctionless Field-Effect Transistor