Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
The influence of source/drain (S/D) parasitic resistance in ultrathin body (UTB) III--V channel metal--oxide--semiconductor field-effect transistor (MOSFET) was investigated based on Monte Carlo simulation. We found that heavily doped S/D improves source starvation and suppresses carrier's backscattering from drain to channel, owing to increased electron--electron scattering. As a result, the heavily doped S/D was shown to be effective to enhance the current drive and transconductance of UTB III--V channel MOSFET. In addition, we demonstrated that the heavily doped S/D has the advantage to provide unsaturated drain current characteristics.
- The Japan Society of Applied Physicsの論文
- 2011-08-25
著者
-
Ogawa Matsuto
Department Of Electrical And Electronics Engineering Kobe University
-
Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Maegawa Yōsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
-
Koba Shunsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
-
Maegawa Yosuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Koba Shunsuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
関連論文
- Simulation of Multi-Band Quantum Transport Reflecting Realistic Band Structure
- Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Quantum Electron Transport Modeling in Nano-Scale Devices
- Static and Dynamic Electron Transport in Resonant-Tunneling Diodes
- Wigner Function Formulation of Quantum Transport in Electron Waveguides and Its Application
- Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
- An Algorithm for Designing a Pattern Classifier by Using MDL Criterion
- Transverse-Electric and Transverse-Magnetic Mode Switching in Tensile-Strained Quantum-Well Lasers Induced by the Quantum-Confined Stark Effect
- Valence-Subband Structure of Strained Quantum Wells
- Quantum Transport Modeling of Mesoscopic Devices: Application of Wigner Distribution Function
- Influence of Bipolar Quantum Transport on Gain Characteristics of Strained-MQW Lasers
- Evaluation of Phase Coherent Length of Hot Electrons Based on Wigner Distribution Function
- Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport
- Guided Modes of Electron Wave in a Si-Quantum Wire
- Two-Dimensional Quantum Monte Carlo Device Simulation of Ultrasmall MOSFETs
- Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport
- Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation
- Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels
- Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
- Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal–Oxide–Semiconductor Field-Effect Transistors
- Increased Subthreshold Current due to Source--Drain Direct Tunneling in Ultrashort-Channel III--V Metal--Oxide--Semiconductor Field-Effect Transistors
- Channel Length Scaling Effects on Device Performance of Junctionless Field-Effect Transistor