Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
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概要
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The analysis of multiband quantum transport simulation in double-gate metal oxide semiconductor field effects transistors (DGMOSFETs) is performed based on a non-equilibrium Greens function (NEGF) formalism coupled self-consistently with the Poisson equation. The empirical sp3s* tight binding approximation (TBA) with nearest neighbor coupling is employed to obtain a realistic multiband structure. The effects of non-parabolic bandstructure as well as anisotropic features of Si are studied and analyzed. As a result, it is found that the multiband simulation results on potential and current profiles show significant differences, especially in higher applied bias, from those of conventional effective mass model.
- 2008-01-01
著者
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OGAWA Matsuto
Department of Electrical and Electronics Engineering, Kobe University
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MIYOSHI Tanroku
Department of Electrical and Electronics Engineering, Kobe University
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Souma Satofumi
Department of Physics and Astronomy, University of Delaware
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Souma Satofumi
Department Of Electronics And Electrical Engineering Kobe University
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Ogawa Matsuto
Department Of Electronics And Electrical Engineering Kobe University
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Ogawa Matsuto
Department Of Electrical And Electronics Engineering Kobe University
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FITRIAWAN Helmy
Graduate School of Science and Technology, Kobe University
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Fitriawan Helmy
Graduate School Of Science And Technology Kobe University
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Miyoshi Tanroku
Department Of Electronics And Electrical Engineering Kobe University
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Miyoshi Tanroku
Department Of Electrical And Electronics Engineering Kobe University
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Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Souma Satofumi
Department Of Electrical And Electronic Engineering Kobe University
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