Transverse-Electric and Transverse-Magnetic Mode Switching in Tensile-Strained Quantum-Well Lasers Induced by the Quantum-Confined Stark Effect

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-08-30

著者

• OGAWA Matsuto

  Department of Electrical and Electronics Engineering, Kobe University

• MIYOSHI Tanroku

  Department of Electrical and Electronics Engineering, Kobe University

• Ogawa M

  Mitsubishi Electric Corp. Kyoto Jpn

• Ogawa Matsuto

  Department Of Electrical And Electronics Engineering Kobe University

• Miyoshi Tanroku

  Department Of Electrical And Electronics Engineering Kobe University

• Ogawa Matsuto

  Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University

関連論文

• Simulation of Multi-Band Quantum Transport Reflecting Realistic Band Structure
• Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors
• Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
• Quantum Electron Transport Modeling in Nano-Scale Devices
• Static and Dynamic Electron Transport in Resonant-Tunneling Diodes
• Wigner Function Formulation of Quantum Transport in Electron Waveguides and Its Application
• Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
• Transverse-Electric and Transverse-Magnetic Mode Switching in Tensile-Strained Quantum-Well Lasers Induced by the Quantum-Confined Stark Effect
• Valence-Subband Structure of Strained Quantum Wells
• Quantum Transport Modeling of Mesoscopic Devices: Application of Wigner Distribution Function
• Influence of Bipolar Quantum Transport on Gain Characteristics of Strained-MQW Lasers
• Evaluation of Phase Coherent Length of Hot Electrons Based on Wigner Distribution Function
• Spin Configuration of a Circular Quantum Dot in a Magnetic Field
• Current Noise in Semiconductor Quantum Dots
• Guided Modes of Electron Wave in a Si-Quantum Wire
• Two-Dimensional Quantum Monte Carlo Device Simulation of Ultrasmall MOSFETs
• Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport
• Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation
• Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels
• Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
• Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal–Oxide–Semiconductor Field-Effect Transistors
• Increased Subthreshold Current due to Source--Drain Direct Tunneling in Ultrashort-Channel III--V Metal--Oxide--Semiconductor Field-Effect Transistors
• Channel Length Scaling Effects on Device Performance of Junctionless Field-Effect Transistor

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