Influence of Bipolar Quantum Transport on Gain Characteristics of Strained-MQW Lasers
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Tsuchiya Hideaki
Department Of Electrical And Electronics Engineering Kobe University
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Miyoshi Tanroku
Department Of Electrical And Electronics Engineering Kobe University
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HAYASHI Yasutoshi
Department of Electrical and Electronics Engineering, Kobe University
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Hayashi Yasutoshi
Department Of Electrical And Electronics Engineering Kobe University
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Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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- Valence-Subband Structure of Strained Quantum Wells
- Quantum Transport Modeling of Mesoscopic Devices: Application of Wigner Distribution Function
- Influence of Bipolar Quantum Transport on Gain Characteristics of Strained-MQW Lasers
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- Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport
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- Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation
- Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels
- Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
- Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal–Oxide–Semiconductor Field-Effect Transistors
- Increased Subthreshold Current due to Source--Drain Direct Tunneling in Ultrashort-Channel III--V Metal--Oxide--Semiconductor Field-Effect Transistors
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