Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
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概要
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Ballistic performances of InAs, InSb, and GaSb nanowire field-effect transistors (NWFETs) were theoretically investigated. We found that InAs and InSb NWFETs exhibit similar device performances due to 1D band structure effects. Furthermore, although these In-based NWFETs suffer from the density-of-states (DOS) bottleneck, a lower power switching is expected. On the other hand, GaSb NWs have multiple energy subbands at conduction band minima, as a result of the projection of L-valleys which thus improves the DOS. In particular, a \langle 110\rangle-oriented GaSb NW has an improved DOS and a high electron velocity simultaneously, and thus, it could be a strong competitor to In-based NWFETs.
- 2013-03-25
著者
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Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Tsuchiya Hideaki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Kamakura Yoshinari
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
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Mori Nobuya
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
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Shimoida Kenta
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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