Mori Nobuya | Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
スポンサーリンク
概要
- Mori Nobuyaの詳細を見る
- 同名の論文著者
- Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japanの論文著者
関連著者
-
Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Kamakura Yoshinari
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
-
Mori Nobuya
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
-
Ohmori Masaki
Department Of Pathology Kagawa Medical University
-
Maegawa Yosuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Koba Shunsuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Ogawa Matsuto
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
-
Tsuchiya Hideaki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
-
Shimoida Kenta
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
-
Ohmori Masaki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
-
Maegawa Yōsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
著作論文
- Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
- Increased Subthreshold Current due to Source--Drain Direct Tunneling in Ultrashort-Channel III--V Metal--Oxide--Semiconductor Field-Effect Transistors