Maegawa Yosuke | Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
スポンサーリンク
概要
- 同名の論文著者
- Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe Universityの論文著者
関連著者
-
Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Maegawa Yosuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Koba Shunsuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
-
Ohmori Masaki
Department Of Pathology Kagawa Medical University
-
Ogawa Matsuto
Department Of Electrical And Electronics Engineering Kobe University
-
Maegawa Yōsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
-
Koba Shunsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
-
Ogawa Matsuto
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
-
Kamakura Yoshinari
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
-
Mori Nobuya
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
-
Ohmori Masaki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
-
Maegawa Yōsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
著作論文
- Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Increased Subthreshold Current due to Source--Drain Direct Tunneling in Ultrashort-Channel III--V Metal--Oxide--Semiconductor Field-Effect Transistors