Ogawa Matsuto | Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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概要
- 同名の論文著者
- Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe Universityの論文著者
関連著者
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Ogawa Matsuto
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Tsuchiya Hideaki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Ogawa Matsuto
Department Of Electrical And Electronics Engineering Kobe University
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Miyoshi Tanroku
Department Of Electrical And Electronics Engineering Kobe University
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OGAWA Matsuto
Department of Electrical and Electronics Engineering, Kobe University
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MIYOSHI Tanroku
Department of Electrical and Electronics Engineering, Kobe University
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Ogawa M
Kobe Univ. Kobe‐shi Jpn
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TSUCHIYA Hideaki
Department of Electrical and Electronics Engineering, Kobe University
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Tsuchiya Hideaki
Department Of Electrical And Electronics Engineering Kobe University
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Miyoshi T
Graduate School Of Science And Technology Kobe University
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Koba Shunsuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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土屋 英昭
神戸大学大学院工学研究科電気電子工学専攻
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Tsuchiya Hajime
Department Of Polymer Science And Engineering Faculty Of Textile Science Kyoto Institute Of Technolo
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Tsuchiya H
Toshiba Corp. Kawasaki Jpn
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Maegawa Yosuke
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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土屋 英昭
神戸大学大学院工学研究科:jst Crest
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Nagai Katsuyuki
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Tsuchiya Hideaki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Kamakura Yoshinari
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
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Mori Nobuya
Japan Science and Technology Agency, CREST, Chiyoda, Tokyo 102-0076, Japan
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Oda Azusa
Department Of Electrical And Electronics Engineering Kobe University
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HORINO Motoki
Department of Electrical and Electronics Engineering, Kobe University
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Souma Satofumi
Department of Physics and Astronomy, University of Delaware
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Ohmori Masaki
Department Of Pathology Kagawa Medical University
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Souma Satofumi
Department Of Electronics And Electrical Engineering Kobe University
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Ogawa M
Mitsubishi Electric Corp. Kyoto Jpn
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Ogawa Matsuto
Department Of Electronics And Electrical Engineering Kobe University
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FITRIAWAN Helmy
Graduate School of Science and Technology, Kobe University
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Fitriawan Helmy
Graduate School Of Science And Technology Kobe University
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Miyoshi Tanroku
Department Of Electronics And Electrical Engineering Kobe University
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Horino Motoki
Department Of Electrical And Electronics Engineering Kobe University
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Hosokawa Hiroshi
Department Of Dermatology Kansai Medical University
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Maegawa Yōsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
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Koba Shunsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
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CHOI Jaeil
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
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NAGAI Katsuyuki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
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Souma Satofumi
Department Of Electrical And Electronic Engineering Kobe University
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Choi Jaeil
Department Of Electrical And Electronic Engineering Graduate School Of Engineering Kobe University
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Miyoshi Tanroku
Department of Electrical and Electronics Engineering, Kobe University, 1-1 Rokko-dai, Nada-ku, Kobe 657-8501, Japan
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Hosokawa Hiroshi
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Hasegawa Naomi
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Sako Ryutaro
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Ogawa Matsuto
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Tsuchiya Hideaki
Department of Electrical and Electronics Engineering, Kobe University, 1-1 Rokko-dai, Nada-ku, Kobe 657-8501, Japan
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Shimoida Kenta
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Ohmori Masaki
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
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Maegawa Yōsuke
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe 657-8501, Japan
著作論文
- Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Quantum Electron Transport Modeling in Nano-Scale Devices
- Static and Dynamic Electron Transport in Resonant-Tunneling Diodes
- Wigner Function Formulation of Quantum Transport in Electron Waveguides and Its Application
- Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
- Transverse-Electric and Transverse-Magnetic Mode Switching in Tensile-Strained Quantum-Well Lasers Induced by the Quantum-Confined Stark Effect
- Valence-Subband Structure of Strained Quantum Wells
- Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs Under Ballistic Transport
- Performance Analysis of Junctionless Transistors Based on Monte Carlo Simulation
- Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels
- Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal--Oxide--Semiconductor Field-Effect Transistors in the Ballistic Transport Limit
- Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal–Oxide–Semiconductor Field-Effect Transistors
- Increased Subthreshold Current due to Source--Drain Direct Tunneling in Ultrashort-Channel III--V Metal--Oxide--Semiconductor Field-Effect Transistors
- Channel Length Scaling Effects on Device Performance of Junctionless Field-Effect Transistor