Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects

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概要

• 論文の詳細を見る
• Institute of Electrical and Electronics Engineers (IEEE)の論文

著者

• Ogawa Matsuto

  Kobe Univ. Kobe‐shi Jpn

• Ogawa Matsuto

  Department Of Electronics And Electrical Engineering Kobe University

関連論文

• Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
• Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects
• Strain Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to Nanowire

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