Phase Change Memory Cell Using Si2Sb2Te3 Material
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概要
- 論文の詳細を見る
Phase memory cell based on Si2Sb2Te3 film shows reversible phase change ability between low and high resistance states. Crystalline Si2Sb2Te3 is a nano composite material consisted of amorphous Si and crystalline Sb2Te3, without separated Te phase. The thermally stable Si2Sb2Te3 material has a better data retention ability (10 years at 407 K) than that of Ge2Sb2Te5 material (10 years at 383 K). Moreover, the Si2Sb2Te3 based phase change memory cell shows good properties including faster operation speed and lower power consumption than those of the Ge2Sb2Te5 based cell.
- 2010-08-25
著者
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Liu Bo
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Rao Feng
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Chen Bomy
Silicon Storage Technology Inc.
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Zhou Xilin
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Wu Liangcai
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Feng Songlin
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Song Zhitang
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Xi Wei
State Key Laboratory Of Functional Materials For Informatics Laboratory Of Nanotechnology Shanghai I
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Wu Liangcai
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Ren Kun
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Ren Kun
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Rao Feng
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Feng Songlin
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Song Zhitang
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Song Zhitang
State Key Laboratory of Functional Material for Information, Shanghai Institute of Metallurgy, Chinese Academy of Science
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Xi Wei
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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Chen Bomy
Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, U.S.A.
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Zhou Xilin
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
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