Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory
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概要
- 論文の詳細を見る
Reversible resistance switching behavior was observed in a simple proto-type non-volatile memory cell using GeTi thin film. The film prepared by magnetic sputtering at room temperature was amorphous. The reversible switching phenomenon appeared when applying a property external bias voltage on the cell. The ratio of the high resistance state (off-state) to the low resistance state (on-state) was 10–$10^{2}$. Because of the electric-pulse-induced resistance switching property of GeTi and its simple binary constitution compatible with the semiconductor industry, the application prospect of GeTi as a storage medium for data recording can be predicted.
- Japan Society of Applied Physicsの論文
- 2007-01-25
著者
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Xu Cheng
Laboratory Of Nanotechnology Shanghai Institute Of Microsystem And Information Technology Chinese Ac
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SONG Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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FENG Songlin
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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WU Liangcai
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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Shen Jie
Laboratory Of Nanotechnology Shanghai Institute Of Microsystem And Information Technology Chinese Ac
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Chen Bomy
Silicon Storage Technology Inc.
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Liu Bo
Laboratory Of Biomechanics School Of Medicine Shanghai Jiao Tong University
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Wu Liangcai
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Shen Jie
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Liu Bo
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Feng Songlin
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Xu Cheng
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Feng Songlin
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
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FENG Songlin
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
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