Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in situ Resistance Measurements
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概要
- 論文の詳細を見る
The amorphous-to-crystal transition has been studied by in-situ resistance measurements for Ge2Sb2Te5 (GST) thin films doped with silicon (Si) or nitrogen (N). It was found that the electrical properties and thermal stability of GST films can be improved by doping small amount of Si in the GST film. In comparison with Si doping, the N doping effects have also been studied and it was revealed that both the Si- and N-doping can increase the electrical conduction activation energy and enhance thermal stability of amorphous GST.
- Japan Society of Applied Physicsの論文
- 2006-04-25
著者
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Ling Yun
Department Of Applied Chemistry China Agricultural University
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Chen Bomy
Silicon Storage Technology Inc.
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Feng Jie
Research Institute Of Micro
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Cai Bingchu
Research Institute Of Micro/nanometer Technology Key Laboratory For Thin Film And Microfabrication T
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Tang Tingao
Department Of Microelectronics Asic & System State Kex Lab Fudan University
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QIAO Baowei
Research Institute of Micro/Nanometer Technology, Shanghai Jiao Tong University
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LAI Yunfeng
Research Institute of Micro/Nanometer Technology, Shanghai Jiao Tong University
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LIN Yinyin
Department of Microelectronics, ASIC and System State Key Lab., Fudan University
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