Design of Multi-States Storage Medium for Phase Change Memory
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概要
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A method has been introduced to realize multi-states storage in phase change memory (PCM) by using stacked phase change films with different amorphous resistivity. The amorphous resistivity of each phase change layer was selected to make the stacked films crystallize successively with the increase of current, and so obtain four resistance states. The thickness of each phase change layer was also optimized to ensure enough resistance difference between neighboring storage state. The thermal conduction simulation was performed, and the results indicate that the stacked Si–Sb–Te films with suitable composition, resistivity and thickness in each layer can crystallize successively with the increase of current and realize multi-states storage in PCM. A memory cell with stacked film structure (Si16Sb33Te51/Si4Sb46Te50/Si11Sb39Te50) was prepared. The film thicknesses of Si16Sb33Te51, Si4Sb46Te50 and Si11Sb39Te50 were optimized to be 40, 80, and 20 nm, respectively. The current–voltage ($I$–$V$) characteristics and the resistance–current ($R$–$I$) characteristics were measured. The results confirmed the four-state storage capability of the memory cell with this stacked film structure.
- 2007-09-15
著者
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Chen Bomy
Silicon Storage Technology Inc.
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Lai Yun-feng
Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, National Key Laboratory of Micro/Nano Fabrication Technology, Shanghai Jiao Tong University, Shanghai 200030, P. R. China
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Feng Jie
Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, National Key Laboratory of Micro/Nano Fabrication Technology, Shanghai Jiao Tong University, Shanghai 200030, P. R. China
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Qiao Bao-Wei
Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, National Key Laboratory of Micro/Nano Fabrication Technology, Shanghai Jiao Tong University, Shanghai 200030, P. R. China
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Cai Bing-chu
Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, National Key Laboratory of Micro/Nano Fabrication Technology, Shanghai Jiao Tong University, Shanghai 200030, P. R. China
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Lin Yin-yin
National Key Laboratory of ASIC & System, Fudan University, Shanghai 200433, P. R. China
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Tang Ting-ao
National Key Laboratory of ASIC & System, Fudan University, Shanghai 200433, P. R. China
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Tang Ting-ao
National Key Laboratory of ASIC & System, Fudan University, Shanghai 200433, P. R. China
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