Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge_2Sb_2Te_5 and Sb_2Te_3)
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2007-01-25
著者
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Liu Bo
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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CHEN Bomy
Silicon Storage Technology, Inc.
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RAO Feng
Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Ac
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SONG Zhitang
Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Ac
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ZHONG Min
Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Ac
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WU Liangcai
Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Ac
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FENG Gaoming
Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Ac
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LIU Bo
Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Ac
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FENG Songlin
Nanotechnology Laboratory, Shanghai Institute of Micro-System and Information Technology, Chinese Ac
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Rao Feng
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Chen Bomy
Silicon Storage Technology Inc.
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Zhong Min
Nanotechnology Laboratory Shanghai Institute Of Micro-system And Information Technology Chinese Acad
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Feng Gaoming
Nanotechnology Laboratory Shanghai Institute Of Micro-system And Information Technology Chinese Acad
関連論文
- Si_2Sb_2Te_6 Phase Change Material for Low-Power Phase Change Memory Application
- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
- High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5
- Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films
- Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge_2Sb_2Te_5 and Sb_2Te_3)
- Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory
- Comparison of the Treatment Performances of High-strength Wastewater in Vertical Subsurface Flow Constructed Wetlands Planted with Acorus calamus and Lythrum salicaria
- Mechanism of Oxidation on Si2Sb2Te5 Phase Change Material and Its Application
- Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test
- Modeling of Two Different Operation Modes of Phase Change Material for Phase-Change Random-Access Memory
- Phase Change Memory Cell Using Si2Sb2Te3 Material
- Crystallization Process of Amorphous GaSb_5Te_4 Film for High-Speed Phase Change Memory
- Phase-Change Characteristics and Thermal Stability of GeTe/Sb2Te3 Nanocomposite Multilayer Films
- Design of Multi-States Storage Medium for Phase Change Memory
- Optimization of Anomalous Cells with High SET Resistance in Phase Change Memory Arrays
- Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory
- Temperature Influence on Electrical Properties of Sb–Te Phase-Change Material
- First-Principles Study of Equilibrium Properties and Electronic Structures of GeTe–Sb2Te3 Pseudobinary Crystalline Films
- Investigation of Compositional Gradient Phase Change SixSb2Te3 Thin Films
- Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in situ Resistance Measurements