Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-01-25
著者
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Liu Bo
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Xu Cheng
Laboratory Of Nanotechnology Shanghai Institute Of Microsystem And Information Technology Chinese Ac
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CHEN Bomy
Silicon Storage Technology, Inc.
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SHEN Jie
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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LIU Bo
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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SONG Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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RAO Feng
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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LIANG Shuang
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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FENG Songlin
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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Rao Feng
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Shen Jie
Laboratory Of Nanotechnology Shanghai Institute Of Microsystem And Information Technology Chinese Ac
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Chen Bomy
Silicon Storage Technology Inc.
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Liang Shuang
Laboratory Of Nanotechnology Shanghai Institute Of Microsystem And Information Technology Chinese Ac
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Feng Songlin
State Key Laboratory Of Functional Materials For Informatics Laboratory Of Nanotechnology Shanghai I
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Liu Bo
Laboratory Of Biomechanics School Of Medicine Shanghai Jiao Tong University
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Song Zhitang
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Song Zhitang
State Key Laboratory Of Functional Materials For Informatics Laboratory Of Nanotechnology Shanghai I
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Feng Songlin
State Key Laboratory Of Functional Materials For Informatics Laboratory Of Nanotechnology Shanghai I
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Feng Songlin
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
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FENG Songlin
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
関連論文
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- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
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