Achieving Multiple Resistance States in Phase-Change Memory Cell
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概要
- 論文の詳細を見る
Ge2Sb2Te5 (GST)-based phase-change random access memory (PCM) cells were successfully fabricated by a standard 0.18 μm complementary metal–oxide–semiconductor (CMOS) process. The bottom electrode contacts (BECs) of the PCM cells are tungsten heaters with hollow columns filled with SiO2 and Ge. An approach of multiple resistance states (MRSs) was demonstrated. It was revealed and simulated that the observed MRS, in fact, derives from the hollow tungsten BEC architecture. The variance of electrical resistance between the MRSs can be as high as two orders. With a proposed model, our research demonstrated a simple but applicable concept of building a more stable multiple storage (MS) PCM cell by simply tuning the contact area between the BEC and GST.
- 2009-07-25
著者
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Zhang Ze
Institute Of Microstructure And Property Of Advanced Materials Beijing University Of Technology
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Liu Bo
Laboratory Of Biomechanics School Of Medicine Shanghai Jiao Tong University
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Wang Ke
Institute Of Medicinal Biotechnology Chinese Academy Of Medical Science & Peking Union Medical C
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Wu Liang
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Han Xiao
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
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Song Zhi
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Feng Song
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Wang Ke
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
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Zhang Ze
Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
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