Investigation of Compositional Gradient Phase Change SixSb2Te3 Thin Films
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概要
- 論文の詳細を見る
Compositional gradient phase change SixSb2Te3 film has been prepared and investigated. The SixSb2Te3 film has been found to lose its phase change property when silicon concentration exceeds 95 at. % according to current–voltage and X-ray diffraction measurements. Current–voltage performance also shows that, when $x\leq7.5$, threshold current decreases significantly with the increase of $x$. However, threshold power reaches its lowest point when $x$ is about 1.7. Si1.7Sb2Te3 film is found to possess an extremely low threshold power and a reasonable low threshold current. The set and reset currents of Si1.7Sb2Te3 based chalcogenide random access memory cell with electrode contact of (0.26 μm)2 are 0.26 and 1.1 mA, respectively, when pulse length is 100 ns.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2007-01-25
著者
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FENG Songlin
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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ZHANG Ting
Graduate School of the Chinese Academic of Sciences
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Chen Bomy
Silicon Storage Technology Inc.
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Liu Bo
Laboratory Of Biomechanics School Of Medicine Shanghai Jiao Tong University
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Zhang Ting
Graduate School of the Chinese Academic of Sciences, Beijing 100049, China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
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FENG Songlin
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
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