Temperature Influence on Electrical Properties of Sb–Te Phase-Change Material
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概要
- 論文の詳細を見る
Temperature dependent electrical properties of two typical phase-change Sb–Te stoichiometric compositions (Sb2Te3 and Sb3Te) were investigated. In situ resistance measurement and Hall measurement were employed to follow the crystallization process. Sb3Te has a steep drop of resistance near crystallization temperature, whereas Sb2Te3 exhibits a continuous crystallization behavior. In addition, Sb3Te shows higher thermal stability and larger resistance contrast compared with Sb2Te3. The causation for decrease of resistance was analyzed. For Sb3Te, the drop of resistance is mainly contributed by the increase of carrier density. While for Sb2Te3, the increase of mobility has dominant influence on the drop of resistance.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-02-25
著者
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SONG Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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FENG Songlin
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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WU Liangcai
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese
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Chen Bomy
Silicon Storage Technology Inc.
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Liu Bo
Laboratory Of Biomechanics School Of Medicine Shanghai Jiao Tong University
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Liu Chunliang
Key Laboratory For Physical Electronics And Devices Of The Ministry Of Education Of China Xi'an
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Wang Feng
Laboratory Of Bio-organic Chemistry Tokyo University Of Agriculture And Technology
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Zhang Ting
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Feng Songlin
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Wang Feng
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Liu Bo
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Wu Liangcai
Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Liu Chunliang
Key Laboratory of Physical Electronics and Devices of Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Feng Songlin
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Song Zhitang
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
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FENG Songlin
Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
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