Modeling of Two Different Operation Modes of Phase Change Material for Phase-Change Random-Access Memory

概要

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Two basic models for phase-change random-access memory (PRAM) are compared for the first time. Model 1 is based on polycrystalline Ge2Sb2Te5, and the phase change takes place only in some of the film. Model 2 is based on amorphous Ge2Sb2Te5. This work indicates that model 1 has an excellent $R_{\text{OFF}}/R_{\text{ON}}$, but inferior structure and reset current. Model 2 has superior structure and reset current, but inferior $R_{\text{OFF}}/R_{\text{ON}}$. Therefore, for model 2, it is important to control the thickness of nonprogrammable volume to ensure sufficient $R_{\text{OFF}}/R_{\text{ON}}$ and the proper range of the ratio of non-programmable volume and programmable volume is calculated as 0.003–1%. The simulation result shows the temperature distribution of model 2 can satisfy the actual requirement well, and the reset current can be reduced to 0.15 mA, much lower than that in model 1.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2005-03-15