Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application
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概要
- 論文の詳細を見る
The adhesive strength between a phase change film and electrodes is important for the application of phase change random access memory. The adhesive strength between Ge2Sb2Te5 and various types of electrodes as a function of annealing temperature was investigated using Nano Indenter\textregistered. The structural transformation of Ge2Sb2Te5 during annealing was studied by X-ray diffraction. Results show that adhesive strength decreases with an increase in annealing temperature. The adhesive strength between amorphous Ge2Sb2Te5 and electrodes is higher than that between polycrystalline Ge2Sb2Te5 and electrodes, and TiN is a better choice as a heating electrode in the phase change memory application than W and Ti.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-10-25
著者
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Zhang Jianping
Laboratory Of Colloid And Interface Center Of Molecular Science Institute Of Chemistry The Chinese A
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Feng Songlin
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Song Zhitang
State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai
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Wan YongZhong
Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
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Zhang Jing
Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
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Zhang Ting
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Liu Yanbo
Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
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Zhang Guoxin
Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
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Niu Xiaoming
Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
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Min Guoquan
Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
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Lin Yun
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Zhou Weimin
Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
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Chu Jiangtao
Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
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Feng Songlin
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Song Zhitang
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Song Zhitang
State Key Laboratory of Functional Material for Information, Shanghai Institute of Metallurgy, Chinese Academy of Science
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Zhang Jianping
Laboratory of Nanotechnology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China
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