Hafnium Oxide Film Etching Using Hydrogen Chloride Gas
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概要
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Hydrogen chloride gas removes the hafnium oxide film formed by atomic layer deposition at the etch rate of about 1 nm/min. A 100 nm-thick hafnium oxide film was perfectly etched off at 1173 K for 60 min by 100% hydrogen chloride gas at 100 sccm. A weight decrease in the hafnium oxide film was observed at temperatures higher than ca. 600 K, which corresponds to the sublimation point of hafnium tetrachloride. The etching by-product is considered to be hafnium tetrachloride. The etching technique developed in this study is expected to be applicable to various processes, such as the cleaning of a hafnium oxide film deposition reactor.
- 2009-12-25
著者
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Horii Sadayoshi
Hitachi Kokusai Electric Inc.
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Habuka Hitoshi
Department Of Chemical Engineering Science Yokohama National University
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Kobori Yoshitsugu
Department of Chemical and Energy Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan
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Horii Sadayoshi
Hitachi Kokusai Electric Inc., 2-1 Yasuuchi, Yatsuo, Toyama 939-2393, Japan
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Yamaji Masahiko
Department of Chemical and Energy Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan
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Kunii Yasuo
Hitachi Kokusai Electric Inc., 2-1 Yasuuchi, Yatsuo, Toyama 939-2393, Japan
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Habuka Hitoshi
Department of Chemical and Energy Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan
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