Heat Transport Analysis for Flash Lamp Annealing
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概要
- 論文の詳細を見る
The silicon wafer temperature change during flash lamp annealing is theoretically evaluated. A calculation model is developed on the basis of a finite difference method taking into account various heat transport phenomena, such as heat radiation from a lamp to a silicon surface, reflection at the silicon surface, heat radiation from a hot silicon surface, light absorption in silicon, and thermal conduction. The effect of the light absorption in a silicon wafer on the temperature profile is negligible at the position of ultrashallow junction formation. The largest temperature slope is shown to be formed by flash lamp annealing because of the agreement of the temperature slope obtained by taking into account heat absorption in silicon with that obtained by assuming heat absorption only at the surface, without accounting for the light absorption in silicon. This study further concludes that the surface reflectivity strongly affects the silicon temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-03-15
著者
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Hara Akiko
Department Of Chemical Engineering Science Yokohama National University
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Habuka Hitoshi
Department Of Chemical Engineering Science Yokohama National University
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KARASAWA Takeshi
R&D Center, Ushio, Inc.
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YOSHIOKA Masaki
R&D Center, Ushio, Inc.
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Karasawa Takeshi
R&D Center, Ushio, Inc., 1194 Sado Bessho, Himeji, Hyogo 671-0224, Japan
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Yoshioka Masaki
R&D Center, Ushio, Inc., 1194 Sado Bessho, Himeji, Hyogo 671-0224, Japan
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Hara Akiko
Department of Chemical and Energy Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan
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Hara Akiko
Department of Chemical Engineering Science, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan
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Habuka Hitoshi
Department of Chemical and Energy Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan
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