Langasite Crystal Microbalance for Development of Reactive Surface Preparation of Silicon Carbide Film Deposition from Monomethylsilane Gas
スポンサーリンク
概要
- 論文の詳細を見る
A silicon carbide chemical vapor deposition (CVD) process at room temperature was developed using monomethylsilane (MMS) gas by an <i>in situ</i> measurement method using a langasite crystal microbalance (LCM). The phenomenon occurring on the LCM was evaluated by monitoring the frequency change during the processes and by comparing the frequencies in a steady state in ambient hydrogen without the use of any additional gases. The entire process was performed on the LCM, which could be used to evaluate the reactive surface preparation and the silicon carbide film deposition. To produce a reactive surface, a silicon-rich thin film was prepared by the CVD technique using MMS gas at 800 °C. Because the LCM frequency continuously decreased along with the MMS gas supply at room temperature, the silicon carbide film deposition was found to be continuous for 1 min.
- 2011-09-25
著者
-
Habuka Hitoshi
Department of Chemical and Energy Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya, Yokohama 240-8501, Japan
-
Habuka Hitoshi
Department of Chemical and Energy Engineering, Yokohama National University, Yokohama 240-8501, Japan
-
Kote Ken-Ichi
Department of Chemical and Energy Engineering, Yokohama National University, Yokohama 240-8501, Japan
関連論文
- Nonempirical Design of Rapid Thermal Processing System : Instrumentation, Measurement, and Fabrication Technology
- Decarbonation and Pore Structural Change of Ca-Solid Reactant for CaO/CO_2 Chemical Heat Pump
- Air Flow in Square Quartz Plate Spin Cleaner
- Flatness Deterioration of Silicon Epitaxial Film Formed in a Horizontal Single-Wafer Epitaxial Reactor II
- Morphology of Silicon Oxide Film on Silicon Wafer Surface during Its Removal Process in a Hydrogen Ambient : Surfaces, Interfaces, and Films
- Langasite Crystal Microbalance for Development of Reactive Surface Preparation of Silicon Carbide Film Deposition from Monomethylsilane Gas
- Room Temperature Halogenation of Polyimide Film Surface using Chlorine Trifluoride Gas
- Hafnium Oxide Film Etching Using Hydrogen Chloride Gas
- Silicon Carbide Etching Using Chlorine Trifluoride Gas
- Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas
- Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas
- A Practical Design Method for a Rapid Thermal Processing System
- Water Motion in a Water Curtain Head for Cleaning a Large Glass Plate
- Time-Dependent Airborne Organic Contamination on Silicon Wafer Surface Stored in a Plastic Box
- Heat Transport Analysis for Flash Lamp Annealing
- Highly Concentrated Ozone Gas for Preparing Wettable Polyimide Surface
- Heat Transport and Temperature Gradient in Silicon-on-Insulator Wafer during Flash Lamp Annealing Process
- Nonempirical Design of Rapid Thermal Processing System