Effect of Ge Doping on Thermoelectric Properties of SryCo4Sb12-xGex
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概要
- 論文の詳細を見る
Skutterudite compounds, SryCo4Sb12-xGex ($y=0.3$, $x=0--0.3$), are synthesized by a melting method. The effect of germanium doping on thermoelectric properties is investigated. Electrical conductivity, Seebeck coefficient, and thermal conductivity are measured from 300 to 850 K. The substitution of germanium is effective in reducing thermal conductivity while keeping excellent electrical transport properties owing to the high filling fraction of Sr and Ge doping as charge compensation. The dimensionless thermoelectric figure of merit $ZT$ is observed to increase from 0.9 at 850 K for Sr0.28Co4Sb12 to 1.05 for Sr0.34Co4Sb11.9Ge0.1 at 850 K. These results suggest that doping with germanium is an attractive avenue to optimization of filled skutterudites.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-09-25
著者
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Chen Lidong
State Key Lab Of High Performance Ceramics And Superfine Microstructures Shanghai Institute Of Ceram
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Goto Takashi
Institute For Material Research Tohoku University
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Bai Shengqiang
State Key Laboratory Of High Performance Ceramics And Superfine Microstructure Shanghai Institute Of
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Zhao Xueying
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, CAS, Shanghai 200050, China
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Pei Yanzhong
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, CAS, Shanghai 200050, China
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Li Xiaoya
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, CAS, Shanghai 200050, China
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Shi Xun
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, CAS, Shanghai 200050, China
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Goto Takashi
Institute for Materials Research, Tohoku University, Sendai 980-8579, Japan
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Bai Shengqiang
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, CAS, Shanghai 200050, China
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