Electric Field-Induced Strain of PbZrO3 Films
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we report an electric field-induced strain of antiferroelectric (AFE) PbZrO3 (PZ) films deposited by rf-sputtering. The PZ films grown on the (001)Pt/(001)MgO substrate are preferentially oriented along the $c$ axis in a tetragonal system which is perpendicular to the AFE polar direction. On the other hand, the PZ films on the (111)Pt/Ti/Si substrate have a random orientation, and they show clear double $P$–$E$ hysteresis loops, representing the AFE–ferroelectric (FE) phase transition caused by the application of an electric field. The transverse strain induced by the electric field is evaluated by the measurements of tip displacement of PZ/substrate unimorph cantilevers. The PZ films on the Pt/Ti/Si substrate exhibit clear strain jump corresponding to the AFE–FE phase transition, and a maximum transverse strain of $5\times 10^{-5}$ is obtained at an electric field of $-150$ kV/cm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-30
著者
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Kanno Isaku
Department Of Mechanical Engineering Kyoto University
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Suzuki Takaaki
Department Of Dermatology Kobe University School Of Medicine
-
Kotera Hidetoshi
Department Of Mechanical Engineering Kyoto University
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Kotera H
Kyoto Univ. Kyoto Jpn
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INOUE Takashi
Department of Agricultural Chemistry, Faculty of Agriculture, The University of Tokyo
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Wasa Kiyotaka
Department of Micro Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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KOTERA Hidetoshi
Department of Mechanical Engineering, Kyoto University
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Kotera Hidetoshi
Department of Micro Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Suzuki Takaaki
Department of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8610, Japan
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