Composition Dependence of Piezoelectric Properties of Pb(Zr,Ti)O3 Films Prepared by Combinatorial Sputtering
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概要
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We examined the composition and orientation dependences of the piezoelectric properties by combinatorial sputtering. PbTiO3 and PbZrO3 were simultaneously sputtered to prepare composition gradient Pb(Zr,Ti)O3 (PZT) films on Pt/Ti/Si substrates, and an almost linear composition gradient was observed in a range of \text{Zr}/(\text{Zr}+\text{Ti}) ratios from 0.33 to 0.76. Dielectric and piezoelectric properties attained maximum at the Zr/Ti composition close to the morphotropic phase boundary (MPB), which is consistent with that of PZT ceramics. {100}-oriented PZT films showed a higher dielectric constant than the PZT films with the other orientations, while the PZT films with {111} + {100} mixed orientation showed larger values of e_{\text{31,f}}. These results suggest that the a-axis orientation is dominant in the {100}-oriented PZT films. In this study, we demonstrated that the combinatorial sputtering method enables the precise evaluation of the composition dependence of piezoelectric and dielectric properties.
- 2012-09-25
著者
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Kanno Isaku
Department Of Mechanical Engineering Kyoto University
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Kotera Hidetoshi
Department Of Mechanical Engineering Kyoto University
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Kotera H
Kyoto Univ. Kyoto Jpn
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Adachi Kazuhiko
Department of Internal Medicine, Kobe Rosai Hospital
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Adachi Kazuhiko
Department of Mechanical Engineering, Kobe University, Kobe 657-8501, Japan
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Tomioka Kohei
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Kurokawa Fumiya
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Yokokawa Ryuji
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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Kanno Isaku
Department of Mechanical Engineering, Kobe University, Kobe 657-8501, Japan
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KOTERA Hidetoshi
Department of Mechanical Engineering, Kyoto University
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Kotera Hidetoshi
Department of Micro Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
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Kotera Hidetoshi
Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
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