Compositional dependence of Pb(Mg

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概要

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• We evaluated the compositional dependence of Pb(Mg<inf>1/3</inf>,Nb<inf>2/3</inf>)O<inf>3</inf>–PbTiO<inf>3</inf>(PMN–PT) polycrystalline thin films by combinatorial sputtering. We prepared compositional gradient (1 − x)PMN–xPT polycrystalline thin films with preferential orientation along the 〈001〉 direction in the composition range of x = 0–0.62. We determined that the morphotropic phase boundary (MPB) composition of PMN–PT polycrystalline thin film existed at around x = 0.35, from the X-ray diffraction (XRD) measurements. The maximum value of relative dielectric constants (ε<inf>r</inf>= 1498) was obtained at approximately x = 0.23. On the other hand, the piezoelectric coefficients (|e<inf>31,f</inf>| = 14.1 C/m²) peaked at the determined MPB composition of x = 0.35. From the results of the compositional dependence of dielectric and piezoelectric characteristics, the FOM ([Formula: see text]) of the PMN–PT (x = 0.35) thin film reached 21 GPa, which is much higher than that of the other polycrystalline piezoelectric thin films. These results suggest that PMN–PT (x = 0.35) thin film is a promising material for high-efficiency piezoelectric MEMS energy harvesters.

• Institute of Physicsの論文
• 2014-09-03

著者

• Kurokawa Fumiya

  Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan

関連論文

• Dry Etching of Lead-Free (K,Na)NbO Piezoelectric Films by Ar/CF Plasma
• Composition Dependence of Piezoelectric Properties of Pb(Zr,Ti)O3 Films Prepared by Combinatorial Sputtering
• Compositional dependence of Pb(Mg

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