Characterization of Tantalum Nitride Thin Films Fabricated by Pulsed Nd:YAG Laser Deposition Method
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概要
- 論文の詳細を見る
Growth mechanisms of crystalline tantalum nitride (TaN) films have been studied on silicon substrates using a pulsed Nd:YAG laser deposition method. Experimental results show that the properties of the TaN films strongly depend on the substrate temperatures and nitrogen gas pressures. This suggests that both the phase reaction in the plasma plume and the surface reaction on the substrate are important for preparing crystalline TaN films.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-15
著者
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Ebihara Kenji
Graduate School Of Science And Technology And Department Of Electrical And Computer Engineering Kuma
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DOI Kazuya
Department of Advanced Prosthodontics, Division of Cervico-Gnathostomatology, Programs for Applied B
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Namba Jun
Department Of Electrical Engineering Sasebo National College Of Technology
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Suda Yoshiaki
Department of Electrical Engineering, Sasebo National College of Technology, 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
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Suda Yoshiaki
Department of Electrical and Electronic Engineering, Sasebo National College of Technology, Sasebo, Nagasaki 857-1193, Japan
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Doi Kazuya
Department of Electrical Engineering, Sasebo National College of Technology, 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
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Kawasaki Hiroharu
Department of Electrical Engineering, Sasebo National College of Technology, 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
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Kawasaki Hiroharu
Department of Electrical and Electronic Engineering, Sasebo National College of Technology, Sasebo, Nagasaki 857-1193, Japan
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Ohshima Tamiko
Graduate school of Science and Technology, Kumamoto University, Kurokami 2-39-1, Kumamoto 860-0862, Japan
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Namba Jun
Department of Electrical Engineering, Sasebo National College of Technology, 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
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