Gas Sensing Properties of Metal Doped WO3 Thin Film Sensors Prepared by Pulsed Laser Deposition and DC Sputtering Process
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概要
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Tungsten trioxide (WO3) thin films gas sensors were prepared by the KrF excimer pulsed laser deposition (PLD) method. The films were prepared on the quartz glass, silicon and also on the Al2O3 sensor substrates with platinum interdigitated electrodes. The effect of doping of the platinum (Pt), palladium (Pd) or gold (Au) on the WO3 thin film was also investigated. These metals were doped to the WO3 thin film by the DC sputtering process during the PLD. The substrate temperature and the oxygen pressure were 400 °C and 100 mTorr, respectively, during the deposition. The films were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD). The sensitivity of the prepared sensors to 60 ppm NO gas was examined using the two terminal resistance method in a chamber at atmospheric pressure and operating temperatures of 25–350 °C. The sensitivity of the WO3 thin films doped with Pt, Pd, or Au was found to be higher than that of the undoped WO3 thin film.
- 2006-10-30
著者
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Bhuiyan Md.
Graduate School Of Agriculture And Biological Sciences Osaka Prefecture University
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Ebihara Kenji
Graduate School Of Science And Technology And Department Of Electrical And Computer Engineering Kuma
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Ueda Tsuyoshi
Graduate School Of Science And Technology Kumamoto University
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Ikegami Tomoaki
Graduate School Of Science And Technology And Department Of Electrical And Computer Engineering Kuma
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Bhuiyan Md.
Graduate School of Science and Technology, Department of Frontier Technology for Energy and Devices, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
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Ebihara Kenji
Graduate School of Science and Technology, Department of Frontier Technology for Energy and Devices, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
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Ueda Tsuyoshi
Graduate School of Science and Technology, Department of Frontier Technology for Energy and Devices, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
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Ikegami Tomoaki
Graduate School of Science and Technology, Department of Frontier Technology for Energy and Devices, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
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