化学溶液塗布法による誘電体薄膜の高均質化とウェハレベル成膜

概要

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It is difficult to prepare homogeneous dielectric film on the large wafer. Chemical solution deposition method is useful for wafer level film preparation because large area film can be easily obtained. However, this method has many process parameters and their optimization is very hard. We therefore introduce a statistical method to reduce the optimization process. Crystallization temperature was clarified to be the most important factor among our selected parameters for high quality dielectric films in our previous study. We investigated more precisely the process parameters that familiar with the temperature based on the usage of larger orthogonal array. The results showed that the precursor formation temperature is the most important factor for high permittivity films. We next prepared the dielectric film on the 4-inch wafer under the optimum conditions for both high orientation and high electrical properties. We successfully formed the film with good properties and (100) preferred orientation as a result. These results will be useful for fabricating MEMS devices and integration technology of electrical devices such as capacitors in wafer level fabrication.