17aA07 In_xGa_<1-x>As板状結晶の育成と基板としての品質評価(半導体バルク,第35回結晶成長国内会議)

概要

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We have invented the traveling liquidus-zone (TLZ) method for growing compositionally uniform In_<0.3>Ga_<0.7>As crystals. Since the TLZ method requires diffusion limited mass transport, plate crystals were grown in order to suppress convection in a melt in the terrestrial application of the TLZ method to the growth of In_<0.3>Ga_<0.7>As crystals. We succeeded in growing homogeneous In_<0.3>Ga_<0.7>As plate crystals and evaluated their quality as a substrate by EPMA, X-ray rocking curve measurements, EPD measurements, electrical properties measurements, PL measurements and so on.
日本結晶成長学会の論文
2005-08-17