Extraction method of the interface and nitride trap density in nitride-based charge trapped flash memories using an optical response (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

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Optical characterization method for extracting the energy level of both Si/SiO_2 interface (D_<it>) and nitride trap density (D_<nitride>) in nitride-based Charge Trapped Flash memories is proposed. As the first method, the D_<it> is successfully extracted from the optical response of a subthreshold current, without both an electrical stress and substrate current measurement. As the second method, the D_<nitride> is successfully extracted from the optical response of a capacitance-voltage (C-V) curve, without both a temperature-dependence and time-dependence measurement. Proposed method is generally applicable to the extraction of both shallow and deep traps in the nitride layer by controlling the wavelength of the optical source.
社団法人電子情報通信学会の論文
2007-06-18