Synthesis of small diameter silicon nanowires on SiO_2 and Si_3N_4 Surfaces
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概要
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We report successful bottom-up synthesis of small diameter silicon nanowires (SiNWs) on SiO_2 and Si_3N_4 surfaces. The SiNWs with the diameter comparable to the diameter of the Au nano-particles (10〜20nm) are similarly grown on those surfaces, as in the case of Si substrates which are commonly used for the wire growth. The growth temperature for obtaining dense SiNWs on these substrates is higher (460〜470℃) than the case of normal Si substrates (440℃). The growth on patterned substrates demonstrates that SiNWs can be selectively grown. Furthermore, the directed growth over metal structures is also shown to be possible.
- 2009-06-17
著者
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Lee J.-e.
Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer
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Lee J.
School Of Advanced Materials Science And Engineering And Skku Advanced Institute Of Nanotechnology S
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Whang D.
School Of Advanced Materials Science And Engineering And Skku Advanced Institute Of Nanotechnology S
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Hwang S.
School Of Electrical Engineering Korea University:research Center For Time-domain Nano-functional De
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Hwang S.
School Of Electrical Engineering Korea University
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Kang M.
School Of Electrical Engineering Korea University
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Ahn J.
School of Electrical Engineering, Korea University
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Koo T.
School of Advanced Materials Science and Engineering, and SKKU Advanced Institute of Nanotechnology,
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Ahn J.
School Of Electrical Engineering Korea University:research Center For Time-domain Nano-functional De
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Koo T.
School Of Advanced Materials Science And Engineering And Skku Advanced Institute Of Nanotechnology S
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